Ruthenium (Ru) is a refractory metal that has applications in the semiconductor industry as a sputtering target material. However, conventional powder metallurgy methods cannot produce dense and fine-grained Ru targets with preferred orientation. Here, we present a novel method of hot-pressing deformation to fabricate Ru targets with high relative density (98.8%), small grain size (~4.4 µm) and strong (002) texture. We demonstrate that applying pressures of 30-40 MPa at 1400 °C transforms cylindrical Ru samples into disk-shaped targets with nearly full densification in the central region. We also show that the hardness and the (002)/(101) peak intensity ratio of the targets increase with the pressure, indicating enhanced mechanical and crystallographic properties. Our study reveals the mechanisms of densification and texture formation of Ru targets by hot-pressing deformation.
Ag/Y2O3 has excellent potential to replace Ag/CdO as the environmentally friendly electrical contact material. Using spherical Y2O3 as the starting material, Ag/Y2O3 contacts with a quasi-continuous network structure were successfully fabricated by a low-energy ball milling treatment. The mean size of Y2O3 used ranged from 243 to 980 nm. Due to the differences in the size of Y2O3, Ag/Y2O3 contacts had different primitive microstructures, thereby exhibiting distinctive anti-arc-erosion capabilities. Ag/Y2O3 contact prepared using 243 nm Y2O3 showed the best anti-arc-erosion capability and the most outstanding electrical performance measures, such as low contact resistance, less mass transfer, and no failure up to 105 cycle times. The quasi-continuous network structure formed in the micro-scale was responsible for the excellent electrical performance. The short distance between Y2O3 particles in the network promoted the cathode arc motion, and thus alleviated the localized erosion. The results obtained herein may inspire further attempts to design electrical contacts rationally.
LuAG:Ce (Lu3Al5O12:Ce) is one of the most important color converters in white lighting industry. Especially, LuAG:Ce film attracts more attention due to the outstanding advantages, such as the efficient heat dissipation, the saving of rare earth, and so on. Here, LuAG:Ce film on sapphire was successfully prepared by the ultrasonic spray pyrolysis process. The phase, microstructure and photoluminescence of LuAG:Ce films were investigated. LuAG:Ce films had a thickness of around 5 µm, which were well crystallized at 1000 °C in air atmosphere to form the typical garnet structure. Under the protection of CO atmosphere, increasing the annealing temperature greatly enhanced the photoluminescence performance. After annealing at 1500 °C for 5 h in CO atmosphere, 3.0 mol.% Ce3+ doped LuAG:Ce film exhibited the highest emission and excitation intensity. The emission intensity of 3.0 mol.% Ce3+ doped LuAG:Ce film annealed at 1500 °C in CO atmosphere increased up to five times, when compared with the best LuAG:Ce film annealed at 1000 °C in air atmosphere. The effects of Ce3+ doping concentration on the photoluminescence were also examined. As the Ce3+ doping concentration increased from 0.2 mol.% to 7.0 mol.%, the color of LuAG:Ce films changed from yellowish green to greenish yellow. When coupling the 3.0 mol.% Ce3+ doped LuAG:Ce film with a 0.5 W 450 nm blue laser, the formed device successfully emitted white light.
